aot3n60 600v,2.5a n-channel mosfet general description product summary v ds i d (atv gs =10v) 2.5a r ds(on) (atv gs =10v) <3.5 w 100%uistested100%r g tested forhalogenfreeadd"l"suffixtopartnumber:aot3n60l symbol v ds v gs i dm i ar e ar e as peakdioderecoverydv/dt dv/dt t j ,t stg t l symbol r q ja r q cs r q jc a w w/ o c c mj v/ns c maximumcasetosink a maximumjunctiontocase mj c/w c/w derateabove25 o c parameter typical maximum maximumleadtemperatureforsoldering purpose,1/8"fromcasefor5seconds theaot3n60havebeenfabricatedusinganadvanced highvoltagemosfetprocessthatisdesignedtodeliver highlevelsofperformanceandrobustnessinpopularac dcapplications.byprovidinglowr ds(on) ,c iss andc rss alongwithguaranteedavalanchecapabilitythesepartscanbeadoptedquicklyintonewandexistingofflinepower supplydesigns. v units parameter absolute maximum ratings t a =25c unless otherwise noted 700v@150 drainsourcevoltage 600 maximum v 30 gatesourcevoltage t c =100c a 8 pulseddraincurrent c continuousdraincurrent t c =25c i d avalanchecurrent c 60 singlepulsedavalancheenergy g 120 2 repetitiveavalancheenergy c junctionandstoragetemperaturerangemaximumjunctiontoambient a,d powerdissipation b p d t c =25c thermal characteristics 300 55to150 0.7 1.2 0.5 units c/w 54 65 1.5 2.5 1.9 83 5 topview to-220 g d s g ds rev5:may2011 www.aosmd.com page1of5
aot3n60 symbol min typ max units 600 700 bv dss / ?tj 0.65 v/ o c 1 10 i gss gatebodyleakagecurrent 100 n a v gs(th) gatethresholdvoltage 3 4 4.5 v r ds(on) 2.9 3.5 w g fs 2.8 s v sd 0.64 1 v i s maximumbodydiodecontinuouscurrent 2 a i sm 8 a c iss 240 304 370 pf c oss 25 31.4 38 pf c rss 2.6 3.3 4 pf r g 2.3 2.9 6.0 w q g 9.9 12 nc q gs 2.1 3 nc q gd 4.6 6 nc t d(on) 17 20 ns t r 17 20 ns t d(off) 24 30 ns t f 16 20 ns t rr 175 210 ns q rr 1.4 1.7 m c thisproducthasbeendesignedandqualifiedfortheconsumermarket.applicationsorusesascriticalcomponentsinlifesupportdevicesorsystemsarenotauthorized.aosdoesnotassumeanyliabilityarising outofsuchapplicationsorusesofitsproducts.aosreservestherighttoimproveproductdesign, functionsandreliabilitywithoutnotice. bodydiodereverserecoverytime staticdrainsourceonresistance v gs =10v,i d =1.25a reversetransfercapacitance i f =2a,di/dt=100a/ m s,v ds =100v v gs =0v,v ds =25v,f=1mhz switching parameters i s =1a,v gs =0v v ds =40v,i d =1.25a forwardtransconductance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v ds =5v i d =250 m a v ds =480v,t j =125c zerogatevoltagedraincurrent i dss zerogatevoltagedraincurrent v ds =600v,v gs =0v id=250a,vgs=0v diodeforwardvoltageturnoffdelaytime v gs =10v,v ds =300v,i d =2a, r g =25 w gateresistance v gs =0v,v ds =0v,f=1mhz turnofffalltime totalgatecharge v gs =10v,v ds =480v,i d =2a gatesourcechargegatedraincharge bv dss bodydiodereverserecoverycharge i f =2a,di/dt=100a/ m s,v ds =100v maximumbodydiodepulsedcurrentinputcapacitance outputcapacitance turnondelaytime dynamic parameters turnonrisetime m a v ds =0v,v gs =30v v drainsourcebreakdownvoltage i d =250a,v gs =0v,t j =25c i d =250a,v gs =0v,t j =150c a.thevalueofr q ja ismeasuredwiththedeviceinastillairenvironmentwitht a =25c. b.thepowerdissipationp d isbasedont j(max) =150c,usingjunctiontocasethermalresistance,andismoreusefulinsettingtheupper dissipationlimitforcaseswhereadditionalheatsinkingisused.c.repetitiverating,pulsewidthlimitedbyjunctiontemperaturet j(max) =150c,ratingsarebasedonlowfrequencyanddutycyclestokeepinitialt j =25c.d.ther q ja isthesumofthethermalimpedencefromjunctiontocaser q jc andcasetoambient. e.thestaticcharacteristicsinfigures1to6areobtainedusing<300 m spulses,dutycycle0.5%max. f.thesecurvesarebasedonthejunctiontocasethermalimpedencewhichismeasuredwiththedevicemountedtoalargeheatsink,assumingamaximumjunctiontemperatureoft j(max) =150c.thesoacurveprovidesasinglepulserating. g.l=60mh,i as =2a,v dd =150v,r g =25 ? ,startingt j =25c rev5:may2011 www.aosmd.com page2of5
aot3n60 typical electrical and thermal characteristics 40 1.0e05 1.0e04 1.0e03 1.0e02 1.0e01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0 1 2 3 4 5 0 5 10 15 20 25 30 v ds (volts) fig 1: on-region characteristics i d (a) v gs =5.5v 6v 10v 6.5v 0.1 1 10 2 4 6 8 10 v gs (volts) figure 2: transfer characteristics i d (a) 55c v ds =40v 25c 125c 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 1 2 3 4 5 6 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( w ww w ) v gs =10v 0 0.5 1 1.5 2 2.5 100 50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =1.25a 0.8 0.9 1 1.1 1.2 100 50 0 50 100 150 200 t j (c) figure 5:break down vs. junction temparature bv dss (normalized) rev5:may2011 www.aosmd.com page3of5
aot3n60 typical electrical and thermal characteristics 0 3 6 9 12 15 0 2 4 6 8 10 12 14 q g (nc) figure 7: gate-charge characteristics v gs (volts) v ds =480v i d =2a 1 10 100 1000 0.1 1 10 100 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0.01 0.1 1 10 1 10 100 1000 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area for aot3n60 (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 t case (c) figure 10: current de-rating (note b) current rating i d (a) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance for aot3n60 (note f) z q qq q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =1.5c/w indescendingorderd=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse t on t p d singlepulse rev5:may2011 www.aosmd.com page4of5
aot3n60 + vdc ig vds dut + vdc vgs vgs 10v qg qgs qgd charge gatechargetestcircuit&waveform + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istiveswitchingtestcircuit&waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut + vdc l vgs vds id vgs bv i unclampedinductiveswitching(uis)testcircuit& waveforms ig vgs + vdc dut l vds vgs vds isd isd dioderecoverytestcircuit&waveforms vds vds+ i f ar dss 2 e=1/2li di/dt i rm rr vdd vdd q=idt t rr ar ar rev5:may2011 www.aosmd.com page5of5
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